Global GaN Semiconductor Devices Market to Grow at an Exponential CAGR of 17.0% during the Period of
As compared to gallium arsenide (GaAS) and silicon carbide (SiC), Gallium nitride (GaN) is a new technology and is a wide band gap semiconductor material. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size.
The global GaN semiconductor devices market is witnessing rapid growth due to characteristics such as low power consumption, high resistance to temperature, better thermal stability and very high breakdown voltage. GaN semiconductor is widely recognized as a green technology across many end-user industries. With a progress in the GaN technology and reduction in costs, the use of GaN semiconductors is likely to significantly rise across a rising number of application in the near future. Considering this aspect, a new research report with a title “GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 – 2024” has been recently added to the vast online repository of Market Research Reports Search Engine (MRRSE). This report on GaN semiconductor devices market analyzes the current status as well as future prospects of the market across the globe.
Request For Sample Report: http://www.mrrse.com/sample/997
The global GaN semiconductor devices market is expected to rise at an exponential CAGR of 17.0% over the period between 2016 and 2024. Rising at this rate, the market will reach a valuation of US$3,438.4 million by 2024 from US$870.9 million in 2015. This report also provides a comprehensive analysis of market dynamics, such as market drivers, restraints, risks and opportunities, is included within the scope of the study. Market dynamics are unique factors that impact the demand of the specific market and therefore aid to study the present trends in the global scenario. Besides this, a list of top GaN based devices manufacturers are also included in the scope of the study.
The global GaN semiconductor devices market is segregated on the basis of product type, wafer size, application and geographic region. Based on product, the global market is segmented into Power Semiconductors, GaN Radio Frequency Devices and Opto-semiconductors. Likewise, the market is broadly segmented on the basis of wafer size into 2 inch, 4 inch, 6 inch and 8 inch. Based on application, the market is segmented into Information and Communication Technology, Automotive, Consumer Electronics, Defense and Aerospace and others. The profiling of the key companies in the global GaN semiconductor devices market and their market shares across major regions which include Asia Pacific, North America, Europe, and Rest of the World (RoW) is exhaustively studied under the purview of the study. Additionally, the distinct business strategies of key players which have been adopted in the market are also included in the report.
Some of the major players in the market are: Avogy, Inc., Renesas Electronics Corporation, Fujitsu Limited, GaN Systems Inc., Mersen S.A., Cree Inc., NXP Semiconductors N.V., Toshiba Corporation, Everlight Electronics Co. and Efficient Power Conversion Corporation
Browse Full Report with TOC : http://www.mrrse.com/gallium-nitride
Source: Free Articles from ArticlesFactory.com
ABOUT THE AUTHOR
Market Research Reports Search Engine (MRRSE) is an industry-leading database of market intelligence reports. MRRSE is driven by a stellar team of research experts and advisors trained to offer objective advice. Our sophisticated search algorithm returns results based on the report title, geographical region, publisher, or other keywords.
MRRSE partners exclusively with leading global publishers to provide clients single-point access to top-of-the-line market research. MRRSE’s repository is updated every day to keep its clients ahead of the next new trend in market research, be it competitive intelligence, product or service trends or strategic consulting.