Process of Oxide layer deposition in Silicon Wafers

The technique for depositing thin films of oxide on Silicon wafers is known as chemical vapor deposition method. It is a chemical process used to produce high-purity and wafers. The process is often used in the semiconductor industry to produce thin oxide films and fabrication of semiconductor devices. A number of forms of CVD are used for various types of industrial applications. 

7 Variants of chemical vapor deposition Process:

1. Atmospheric pressure CVD: CVD processes at atmospheric pressure.
2. Low-pressure CVD: CVD processes at sub-atmospheric pressures.
3. Ultra-high vacuum CVD: It occurs at very low pressure, in general below 10-6 Pascal.
4. Direct liquid injection CVD: DLICVD process in which the precursors are in liquid form. High growth rates can be reached by using this technique.
5. Plasma-Enhanced CVD: CVD processes that utilize plasma to boost chemical reaction rates of the precursors.

In the CVD process, the wafer is exposed to precursor, which react with the substrate surface to fabricate the desired deposit. Materials used in the CVD process include silicon wafers, carbon nanofibers & nanotubes, carbon fiber, silicon-germanium, tungsten, silicon carbide, silicon nitride, silicon dioxide,  diamond and titanium nitride. Out of all these material silicon wafer are most easily available and have huge applications in Wafer industry and Integrated Circuits. A Silicon wafer is a thin slice of semiconductor material used in the manufacture of micro devices. There are several wafer suppliers that are available which can provide you quality 4" Silicon Wafers with a thermal oxide layer deposited. 

Substances Deposited on Integrated Circuits:

• PolySilicon: The PolySilicon is deposited by the means of a chemical vapor deposition process. In this process synthesis of polycrystalline silicon occurs from silane by a reaction called as the silane reaction. The pure silicon can be deposited for any IC components. Usually the temperatures while deposition remains high, while pressures should be maintained very low.
• Silicon nitride: Silicon nitride is used as an and insulator and chemical barrier in manufacturing ICs and 4" Silicon Wafers. The SiN layer deposited by CVD method contains up to 8% hydrogen and also experiences strong tensile stress, higher resistivity and dielectric strength.
• Metals: CVD processes are widely used for tantalum, titanium, and tungsten. The tungsten hexafluoride, is deposited as a surface layer.

Applications of Chemical Vapor Deposition:

• To produce thin silicon wafer films.
• It used to produce synthetic diamonds.
• Micro fabrication processes widely use CVD to deposit materials.

The use of silicon wafer has allowed technology to advance by leaps and bounds. It has also created countless opportunities for individuals, manufacturers with regard to its innumerable applications.